Gate field effects on the topological insulator BiSbTeSe2 interface
نویسندگان
چکیده
منابع مشابه
Interface electronic structure at the topological insulator-ferrimagnetic insulator junction.
An interface electron state at the junction between a three-dimensional topological insulator film, Bi2Se3, and a ferrimagnetic insulator film, Y3Fe5O12 (YIG), was investigated by measurements of angle-resolved photoelectron spectroscopy and x-ray absorption magnetic circular dichroism. The surface state of the Bi2Se3 film was directly observed and localized 3d spin states of the Fe3+ in the YI...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2020
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.5127065